All Transistors. BD354C Datasheet

 

BD354C Datasheet and Replacement


   Type Designator: BD354C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO66
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BD354C Datasheet (PDF)

 9.1. Size:132K  tesla
 kd135 kd136 kd137 kd138 kd139 kd140 bc211 bc313 bd354 bd355 kd333 kd334 kd335 kd336 kd337 kd338.pdf pdf_icon

BD354C

 9.2. Size:199K  inchange semiconductor
 bd354.pdf pdf_icon

BD354C

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD354DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 2ACE(sat CExcellent Safe Operating AreaComplement to Type BD355Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for

Datasheet: BD350A , BD350B , BD351 , BD351A , BD351B , BD354 , BD354A , BD354B , 2SD1047 , BD355 , BD355A , BD355B , BD355C , BD356 , BD357 , BD358 , BD359 .

History: 2SC999A | CSA1020O | 2N1031C | 2N1056 | UN9217R | KT8107D2 | ECG2306

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