BD355C Datasheet, Equivalent, Cross Reference Search
Type Designator: BD355C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO66
BD355C Transistor Equivalent Substitute - Cross-Reference Search
BD355C Datasheet (PDF)
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bd355.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor BD355DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Saturation Voltage-: V )= -1.0V(Max)@ I = -2.0ACE(sat CExcellent Safe Operating AreaComplement to Type BD354Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general pu
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N6353