All Transistors. BD364 Datasheet

 

BD364 Datasheet and Replacement


   Type Designator: BD364
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
 

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BD364 Datasheet (PDF)

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BD364

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD364DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOExcellent Safe Operating AreaComplement to Type BD365100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andinduc

Datasheet: BD359 , BD361 , BD361A , BD362 , BD362A , BD363 , BD363A , BD363B , 2N2222A , BD365 , BD366 , BD367 , BD368 , BD369 , BD370 , BD370-10 , BD370-16 .

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