All Transistors. BD366 Datasheet

 

BD366 Datasheet and Replacement


   Type Designator: BD366
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
 

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BD366 Datasheet (PDF)

 ..1. Size:182K  inchange semiconductor
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BD366

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD366DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOExcellent Safe Operating AreaComplement to Type BD367100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andinduc

Datasheet: BD361A , BD362 , BD362A , BD363 , BD363A , BD363B , BD364 , BD365 , B772 , BD367 , BD368 , BD369 , BD370 , BD370-10 , BD370-16 , BD370-6 , BD370A .

History: BD807 | 2N5811 | 2SB1140 | 2S013 | BD487 | TT2190 | 2N187

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