BD366 Specs and Replacement
Type Designator: BD366
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
BD366 Substitution
- BJT ⓘ Cross-Reference Search
BD366 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BD366 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Excellent Safe Operating Area Complement to Type BD367 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, series pass regulators, and induc... See More ⇒
Detailed specifications: BD361A, BD362, BD362A, BD363, BD363A, BD363B, BD364, BD365, A940, BD367, BD368, BD369, BD370, BD370-10, BD370-16, BD370-6, BD370A
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