BD366 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD366
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BD366 Transistor Equivalent Substitute - Cross-Reference Search
BD366 Datasheet (PDF)
..1. Size:182K inchange semiconductor
bd366.pdf
bd366.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BD366DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOExcellent Safe Operating AreaComplement to Type BD367100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andinduc
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
