All Transistors. BD367 Datasheet

 

BD367 Datasheet and Replacement


   Type Designator: BD367
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
 

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BD367 Datasheet (PDF)

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BD367

INCHANGE Semiconductorisc Silicon PNP Power Transistors BD367DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOExcellent Safe Operating AreaComplement to Type BD366100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andind

Datasheet: BD362 , BD362A , BD363 , BD363A , BD363B , BD364 , BD365 , BD366 , S8550 , BD368 , BD369 , BD370 , BD370-10 , BD370-16 , BD370-6 , BD370A , BD370A-10 .

History: GES97 | 2SC4443 | BCW45 | MPSA92D | C720 | BD148-6 | GET104

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