BD367 Specs and Replacement
Type Designator: BD367
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
BD367 Substitution
- BJT ⓘ Cross-Reference Search
BD367 datasheet
INCHANGE Semiconductor isc Silicon PNP Power Transistors BD367 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Excellent Safe Operating Area Complement to Type BD366 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, series pass regulators, and ind... See More ⇒
Detailed specifications: BD362, BD362A, BD363, BD363A, BD363B, BD364, BD365, BD366, B772, BD368, BD369, BD370, BD370-10, BD370-16, BD370-6, BD370A, BD370A-10
Keywords - BD367 pdf specs
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History: C5T3904
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