All Transistors. BD367 Datasheet

 

BD367 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD367
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3

 BD367 Transistor Equivalent Substitute - Cross-Reference Search

   

BD367 Datasheet (PDF)

 ..1. Size:197K  inchange semiconductor
 bd367.pdf

BD367 BD367

INCHANGE Semiconductorisc Silicon PNP Power Transistors BD367DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOExcellent Safe Operating AreaComplement to Type BD366100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andind

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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