All Transistors. BD368 Datasheet

 

BD368 Datasheet and Replacement


   Type Designator: BD368
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
 

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BD368 Datasheet (PDF)

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BD368

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD368DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOExcellent Safe Operating AreaComplement to Type BD369100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andinduc

Datasheet: BD362A , BD363 , BD363A , BD363B , BD364 , BD365 , BD366 , BD367 , BC546 , BD369 , BD370 , BD370-10 , BD370-16 , BD370-6 , BD370A , BD370A-10 , BD370A-16 .

History: BD372D-10 | ECG2345

Keywords - BD368 transistor datasheet

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