BD368 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD368
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BD368 Transistor Equivalent Substitute - Cross-Reference Search
BD368 Datasheet (PDF)
..1. Size:182K inchange semiconductor
bd368.pdf
bd368.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BD368DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOExcellent Safe Operating AreaComplement to Type BD369100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andinduc
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
