BD368 Specs and Replacement
Type Designator: BD368
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
BD368 Substitution
- BJT ⓘ Cross-Reference Search
BD368 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BD368 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Excellent Safe Operating Area Complement to Type BD369 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, series pass regulators, and induc... See More ⇒
Detailed specifications: BD362A, BD363, BD363A, BD363B, BD364, BD365, BD366, BD367, 2SA1837, BD369, BD370, BD370-10, BD370-16, BD370-6, BD370A, BD370A-10, BD370A-16
Keywords - BD368 pdf specs
BD368 cross reference
BD368 equivalent finder
BD368 pdf lookup
BD368 substitution
BD368 replacement
