2N2870 Specs and Replacement
Type Designator: 2N2870
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO3
2N2870 Substitution
- BJT ⓘ Cross-Reference Search
2N2870 datasheet
Detailed specifications: 2N2862, 2N2863, 2N2864, 2N2865, 2N2866, 2N2867, 2N2868, 2N2869, S8050, 2N2871, 2N2872, 2N2873, 2N2874, 2N2875, 2N2876, 2N2877, 2N2878
Keywords - 2N2870 pdf specs
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