BD500 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD500
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
BD500 Transistor Equivalent Substitute - Cross-Reference Search
BD500 Datasheet (PDF)
bd500 bd500b.pdf
isc Silicon PNP Power Transistors BD500/BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)-80V(Min)High Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power audio amplifiers utilizingcomplementary or quasi complementary circuits.ABSOLUTE MAXIMUM RATINGS(T
bd500-b bd500 b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD500/B DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) -80V(Min) High Power Dissipation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SA866
