BD505-1 Specs and Replacement
Type Designator: BD505-1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO202
BD505-1 Substitution
BD505-1 detailed specifications
Detailed specifications: BD488 , BD500 , BD500A , BD500B , BD501 , BD501A , BD501B , BD505 , 2N2222A , BD505-5 , BD506 , BD506-1 , BD506-5 , BD507 , BD507-1 , BD507-5 , BD508 .
History: TIPP112 | BD501B | BD505-5
Keywords - BD505-1 transistor specs
BD505-1 cross reference
BD505-1 equivalent finder
BD505-1 lookup
BD505-1 substitution
BD505-1 replacement
History: TIPP112 | BD501B | BD505-5
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