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BD506-1 Specs and Replacement


   Type Designator: BD506-1
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202
 

 BD506-1 Substitution

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BD506-1 detailed specifications

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Detailed specifications: BD500B , BD501 , BD501A , BD501B , BD505 , BD505-1 , BD505-5 , BD506 , 2SD1047 , BD506-5 , BD507 , BD507-1 , BD507-5 , BD508 , BD508-1 , BD508-5 , BD509 .

History: CI3414

Keywords - BD506-1 transistor specs

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