BD509-1 Datasheet. Specs and Replacement

Type Designator: BD509-1  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO202

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BD509-1 datasheet

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BD509-1

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Detailed specifications: BD506-5, BD507, BD507-1, BD507-5, BD508, BD508-1, BD508-5, BD509, BD335, BD509-5, BD510, BD510-1, BD510-5, BD515, BD515-1, BD515-5, BD516

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