BD517-1 Specs and Replacement
Type Designator: BD517-1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO202
BD517-1 Substitution
BD517-1 detailed specifications
Detailed specifications: BD510-5 , BD515 , BD515-1 , BD515-5 , BD516 , BD516-1 , BD516-5 , BD517 , 2SD2499 , BD517-5 , BD518 , BD518-1 , BD518-5 , BD519 , BD519-1 , BD519-5 , BD520 .
History: RN1313
Keywords - BD517-1 transistor specs
BD517-1 cross reference
BD517-1 equivalent finder
BD517-1 lookup
BD517-1 substitution
BD517-1 replacement
History: RN1313
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