BD519-1 Datasheet. Specs and Replacement

Type Designator: BD519-1  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO202

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BD519-1 datasheet

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BD519-1

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Detailed specifications: BD516-5, BD517, BD517-1, BD517-5, BD518, BD518-1, BD518-5, BD519, C3198, BD519-5, BD520, BD520-1, BD520-5, BD524, BD525, BD525-1, BD525-5

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