BD529-1 Datasheet. Specs and Replacement
Type Designator: BD529-1 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO202
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BD529-1 Substitution
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BD529-1 datasheet
Detailed specifications: BD526-5, BD527, BD527-1, BD527-5, BD528, BD528-1, BD528-5, BD529, BC556, BD529-5, BD530, BD530-1, BD530-5, BD533, BD533A, BD533J, BD533K
Keywords - BD529-1 pdf specs
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BJT Parameters and How They Relate
History: BD528-1
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