BD533J Datasheet. Specs and Replacement

Type Designator: BD533J  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

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BD533J datasheet

 9.1. Size:359K  st

bd533 bd534 bd535 bd536 bd537.pdf pdf_icon

BD533J

BD533 BD535 BD537 BD534 BD536 Complementary power transistors . Features BD533, BD535, and BD537 are NPN transistors Description 3 The devices are manufactured in Planar 2 1 technology with Base Island layout. The resulting transistor shows exceptional high gain TO-220 performance coupled with very low saturation voltage. The PNP types are BD534 and BD536. Figure... See More ⇒

 9.2. Size:33K  st

bd533fp bd534fp.pdf pdf_icon

BD533J

BD533FP BD534FP COMPLEMENTARY SILICON POWER TRANSISTORS BD534FP IS SGS-THOMSON PREFERRED SALESTYPE FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) DESCRIPTION The BD533FP is silicon epitaxial-base NPN power transistor in Jedec TO-220FP fully molded isolated package, intented for use in medium 3 2 power linear and switching applications. 1 The complementary P... See More ⇒

 9.3. Size:44K  st

bd533 bd534 bd535 bd536 bd537 bd538.pdf pdf_icon

BD533J

BD533/5/7 BD534/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. 3 2 The complementary PNP types are BD534, 1 BD536, and B... See More ⇒

 9.4. Size:38K  fairchild semi

bd533 bd535 bd537.pdf pdf_icon

BD533J

BD533/535/537 Medium Power Linear and Switching Applications Low Saturation Voltage Complement to BD534, BD536 and BD538 respectively TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD533 45 V BD535 60 V BD537 80 V VCES Collect... See More ⇒

Detailed specifications: BD529, BD529-1, BD529-5, BD530, BD530-1, BD530-5, BD533, BD533A, MPSA42, BD533K, BD533L, BD534, BD534A, BD534J, BD534K, BD534L, BD535

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