BD539 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD539
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220
BD539 Transistor Equivalent Substitute - Cross-Reference Search
BD539 Datasheet (PDF)
bd539.pdf
BD539, BD539A, BD539B, BD539C, BD539DNPN SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD540 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector Current B 1C 2 Up to 120 V VCEO ratingE 3Pin 2 is in electrical contact with the mounting base
bd539.pdf
isc Silicon NPN Power Transistor BD539DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOComplement to Type BD540APPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 40 VCBOV Collec
bd539-a-b-c-d.pdf
BD539, BD539A, BD539B, BD539C, BD539DNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD540 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector CurrentB 1 Up to 120 V VCEO ratingC 2E 3Pin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximum ratings at 25C case temperature (unle
bd539c.pdf
isc Silicon NPN Power Transistor BD539CDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOComplement to Type BD540CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATIN
bd539a.pdf
isc Silicon NPN Power Transistor BD539ADESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOComplement to Type BD540AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATING
bd539d.pdf
isc Silicon NPN Power Transistor BD539DDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type BD540DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATIN
bd539b.pdf
isc Silicon NPN Power Transistor BD539BDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOComplement to Type BD540BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATING
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: PT23T2222A | 2N3735S
History: PT23T2222A | 2N3735S
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