BD539 Datasheet and Replacement

BD539, BD539A, BD539B, BD539C, BD539DNPN SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD540 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector Current B 1C 2 Up to 120 V VCEO ratingE 3Pin 2 is in electrical contact with the mounting base

isc Silicon NPN Power Transistor BD539DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOComplement to Type BD540APPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 40 VCBOV Collec

BD539, BD539A, BD539B, BD539C, BD539DNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD540 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector CurrentB 1 Up to 120 V VCEO ratingC 2E 3Pin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximum ratings at 25C case temperature (unle

isc Silicon NPN Power Transistor BD539CDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOComplement to Type BD540CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATIN

isc Silicon NPN Power Transistor BD539ADESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOComplement to Type BD540AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATING

isc Silicon NPN Power Transistor BD539DDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type BD540DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATIN

isc Silicon NPN Power Transistor BD539BDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOComplement to Type BD540BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATING