BD543C Datasheet, Equivalent, Cross Reference Search
Type Designator: BD543C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
BD543C Transistor Equivalent Substitute - Cross-Reference Search
BD543C Datasheet (PDF)
bd543 bd543a bd543b bd543c.pdf
isc Silicon NPN Power Transistors BD543/A/B/CDESCRIPTION70 W at 25C Case TemperatureComplement to Type BD544/A/B/C8 A Continuous Collector CurrentMinimum Lot-to-Lot variations for robust device performance and reliable operationAPPLICATIONSDesigned for high power audio amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITBD543 40
bd543-a-b-c.pdf
BD543, BD543A, BD543B, BD543CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD544 SeriesTO-220 PACKAGE(TOP VIEW) 70 W at 25C Case Temperature 8 A Continuous Collector CurrentB 1 10 A Peak Collector CurrentC 2 Customer-Specified Selections Available 3EPin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximu
bd543 a b c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD543/A/B/C DESCRIPTION With TO-220C package Complement to type BD544/A/B/C 8 A continuous collector current 10 A peak Collector current PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VAL
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
