BD544B Datasheet, Equivalent, Cross Reference Search
Type Designator: BD544B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
BD544B Transistor Equivalent Substitute - Cross-Reference Search
BD544B Datasheet (PDF)
bd544 bd544a bd544b bd544c.pdf
isc Silicon PNP Power Transistors BD544/A/B/CDESCRIPTION70 W at 25C Case TemperatureComplement to Type BD543/A/B/C8 A Continuous Collector CurrentMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITBD544 -
bd544-a-b-c.pdf
BD544, BD544A, BD544B, BD544CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD543 SeriesTO-220 PACKAGE(TOP VIEW) 70 W at 25C Case Temperature 8 A Continuous Collector CurrentB 1 10 A Peak Collector CurrentC 2 Customer-Specified Selections Available 3EPin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximu
bd544-a-b-c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD544/A/B/C DESCRIPTION 70 W at 25C Case Temperature Complement to Type BD543/A/B/C 8 A Continuous Collector Current APPLICATIONS Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD544 -40BD544A -60 VCBO Collector
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
