BD545A Datasheet and Replacement
Type Designator: BD545A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO218
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BD545A Datasheet (PDF)
bd545 bd545a bd545b bd545c.pdf

isc Silicon NPN Power Transistor BD545/A/B/CDESCRIPTIONCollector Current -I = 15ACCollector-Emitter Breakdown Voltage-: V = 40V(Min)- BD545; 60V(Min)- BD545A(BR)CEO80V(Min)- BD545B; 100V(Min)- BD545CComplement to Type BD546/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power
bd545-a-b-c.pdf

BD545, BD545A, BD545B, BD545CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD546 Series 85 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temper
bd545 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD545/A/B/C DESCRIPTION Collector Current -IC= 15A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C Complement to Type BD546/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching appl
Datasheet: BD543C , BD543D , BD544 , BD544A , BD544B , BD544C , BD544D , BD545 , A940 , BD545B , BD545C , BD545D , BD546 , BD546A , BD546B , BD546C , BD546D .
History: 2SC999A | KT892B | DT4011 | 2N1056 | UN9217R | KT8107D2 | ECG2306
Keywords - BD545A transistor datasheet
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History: 2SC999A | KT892B | DT4011 | 2N1056 | UN9217R | KT8107D2 | ECG2306



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