BD605 Datasheet and Replacement
Type Designator: BD605
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
BD605 Substitution
BD605 Datasheet (PDF)
pmbd6050 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBD6050High-speed diode1999 May 11Product specificationSupersedes data of 1996 Sep 18Philips Semiconductors Product specificationHigh-speed diode PMBD6050FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6050 is a high-speedPIN DESCRIPTIONswitching diode fabricated in planar High switching sp
Datasheet: BD595 , BD596 , BD597 , BD598 , BD599 , BD600 , BD601 , BD602 , 2222A , BD606 , BD607 , BD608 , BD609 , BD610 , BD611 , BD612 , BD613 .
History: 2SD105
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History: 2SD105



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