BD605 Datasheet and Replacement
Type Designator: BD605
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
BD605 Substitution
BD605 Datasheet (PDF)
pmbd6050 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBD6050High-speed diode1999 May 11Product specificationSupersedes data of 1996 Sep 18Philips Semiconductors Product specificationHigh-speed diode PMBD6050FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6050 is a high-speedPIN DESCRIPTIONswitching diode fabricated in planar High switching sp
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2N1183A | 2N2416 | 2N2605 | 2N2597
Keywords - BD605 transistor datasheet
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History: 2N1183A | 2N2416 | 2N2605 | 2N2597



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