BD605 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD605
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
BD605 Transistor Equivalent Substitute - Cross-Reference Search
BD605 Datasheet (PDF)
pmbd6050 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBD6050High-speed diode1999 May 11Product specificationSupersedes data of 1996 Sep 18Philips Semiconductors Product specificationHigh-speed diode PMBD6050FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6050 is a high-speedPIN DESCRIPTIONswitching diode fabricated in planar High switching sp
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BF264