All Transistors. BD605 Datasheet

 

BD605 Datasheet and Replacement


   Type Designator: BD605
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220
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BD605 Datasheet (PDF)

 0.1. Size:63K  philips
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BD605

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBD6050High-speed diode1999 May 11Product specificationSupersedes data of 1996 Sep 18Philips Semiconductors Product specificationHigh-speed diode PMBD6050FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6050 is a high-speedPIN DESCRIPTIONswitching diode fabricated in planar High switching sp

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: EMZ7 | CC6168F | NTE213 | BD585 | BD649 | 2SC4658 | BFT84

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