BD605 Specs and Replacement

Type Designator: BD605

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220

 BD605 Substitution

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BD605 datasheet

 0.1. Size:63K  philips

 pmbd6050 3.pdf pdf_icon

BD605

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6050 High-speed diode 1999 May 11 Product specification Supersedes data of 1996 Sep 18 Philips Semiconductors Product specification High-speed diode PMBD6050 FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6050 is a high-speed PIN DESCRIPTION switching diode fabricated in planar High switching sp... See More ⇒

Detailed specifications: BD595, BD596, BD597, BD598, BD599, BD600, BD601, BD602, BC549, BD606, BD607, BD608, BD609, BD610, BD611, BD612, BD613

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