BD634 Datasheet. Specs and Replacement
Type Designator: BD634 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 185 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO220
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BD634 Substitution
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BD634 datasheet
isc Silicon PNP Power Transistor BD634 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = -25mA FE C Collector-Emitter Breakdown Voltage- V = -45V(Min.) (BR)CEO Complement to Type BD633 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
Detailed specifications: BD614, BD615, BD616, BD617, BD618, BD619, BD620, BD633, BD136, BD635, BD636, BD637, BD638, BD643, BD643F, BD644, BD644F
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