BD646F Datasheet and Replacement
Type Designator: BD646F
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 62 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220F
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BD646F Datasheet (PDF)
bd646f.pdf

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BD646FDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD645FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage
bd644-bd646-bd648-bd650-bd652.pdf

SEMICONDUCTORSBD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings
bd646.pdf

isc Silicon PNP Darlington Power Transistor BD646DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -3AFE CLow Saturation VoltageComplement to Type BD645Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull output
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: RN4610 | PN4890 | SN201 | SLA4052 | KT807AM | PN2904A | CP756
Keywords - BD646F transistor datasheet
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History: RN4610 | PN4890 | SN201 | SLA4052 | KT807AM | PN2904A | CP756



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