All Transistors. BD652F Datasheet

 

BD652F Datasheet and Replacement


   Type Designator: BD652F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 62 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220F
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BD652F Datasheet (PDF)

 ..1. Size:213K  inchange semiconductor
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BD652F

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BD652FDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD651FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstag

 9.1. Size:363K  comset
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BD652F

SEMICONDUCTORSBD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings

 9.2. Size:452K  transys
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BD652F

 9.3. Size:194K  inchange semiconductor
 bd652.pdf pdf_icon

BD652F

isc Silicon PNP Darlington Power Transistor BD652DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -3AFE CLow Saturation VoltageComplement to Type BD651Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull output

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