BD652F Datasheet and Replacement
Type Designator: BD652F
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 62 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220F
BD652F Transistor Equivalent Substitute - Cross-Reference Search
BD652F Datasheet (PDF)
bd652f.pdf
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD652F DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD651F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stag... See More ⇒
bd644-bd646-bd648-bd650-bd652.pdf
SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings... See More ⇒
bd652.pdf
isc Silicon PNP Darlington Power Transistor BD652 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Low Saturation Voltage Complement to Type BD651 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output ... See More ⇒
Datasheet: BD648F , BD649 , BD649F , BD650 , BD650F , BD651 , BD651F , BD652 , 2SA1943 , BD661 , BD661K , BD662 , BD662K , BD663 , BD663A , BD663B , BD664 .
History: BD698A
Keywords - BD652F transistor datasheet
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History: BD698A
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