BD678 Specs and Replacement

Type Designator: BD678

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO126

 BD678 Substitution

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BD678 datasheet

 ..1. Size:110K  motorola

bd676 bd678 bd680 bd682.pdf pdf_icon

BD678

Order this document MOTOROLA by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A Plastic Medium-Power BD678 Silicon PNP Darlingtons BD678A . . . for use as output devices in complementary general purpose amplifier applica- BD680 tions. High DC Current Gain BD680A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD682 BD676, 676A, 678, 678A, 680... See More ⇒

 ..2. Size:41K  st

bd677 bd677a bd678 bd678a bd679 bd679a bd680 bd680a bd681 bd682.pdf pdf_icon

BD678

BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2 ... See More ⇒

 ..3. Size:117K  cdil

bd676 bd678 bd680 bd682 bd684 a.pdf pdf_icon

BD678

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP DARLIGNTON POWER SILICON TRANSISTORS BD676, 676A BD678, 678A BD680, 680A BD682, 684 TO126 Plastic Package E C B For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE E... See More ⇒

 ..4. Size:189K  inchange semiconductor

bd678.pdf pdf_icon

BD678

isc Silicon PNP Darlington Power Transistor BD678 DESCRIPTION Collector Emitter Breakdown Voltage V = -60 (BR)CEO DC Current Gain h = 750(Min) @ I = -1.5 A FE C Complement to Type BD677 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general-purpose amplifier ap... See More ⇒

Detailed specifications: BD675A, BD675H, BD676, BD676A, BD676H, BD677, BD677A, BD677H, A733, BD678A, BD678H, BD679, BD679A, BD679H, BD680, BD680A, BD680H

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