BD733 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD733
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 22 V
Maximum Collector-Emitter Voltage |Vce|: 22 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO220
BD733 Transistor Equivalent Substitute - Cross-Reference Search
BD733 Datasheet (PDF)
..1. Size:255K inchange semiconductor
bd733.pdf
bd733.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD733 DESCRIPTION DC Current Gain - : hFE = 40(Min.)@ IC= 20mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min.) Complement to Type BD734 APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Coll
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
