BD736 Specs and Replacement
Type Designator: BD736
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO220
BD736 Substitution
- BJT ⓘ Cross-Reference Search
BD736 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD736 DESCRIPTION DC Current Gain - hFE = 40(Min.)@ IC= -20mA Collector-Emitter Breakdown Voltage- V(BR)CEO= -35V(Min.) Complement to Type BD735 APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Co... See More ⇒
Detailed specifications: BD722, BD723, BD724, BD725, BD726, BD733, BD734, BD735, BC547B, BD737, BD738, BD743, BD743A, BD743B, BD743C, BD743D, BD743E
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