BD737 Specs and Replacement

Type Designator: BD737

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO220

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BD737 datasheet

 ..1. Size:228K  inchange semiconductor

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BD737

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD737 DESCRIPTION DC Current Gain - hFE = 40(Min.)@ IC= 20mA Collector-Emitter Breakdown Voltage- V(BR)CEO= 45V(Min.) Complement to Type BD738 APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Coll... See More ⇒

Detailed specifications: BD723, BD724, BD725, BD726, BD733, BD734, BD735, BD736, TIP142, BD738, BD743, BD743A, BD743B, BD743C, BD743D, BD743E, BD743F

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