BD737 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD737
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO220
BD737 Transistor Equivalent Substitute - Cross-Reference Search
BD737 Datasheet (PDF)
..1. Size:228K inchange semiconductor
bd737.pdf
bd737.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD737 DESCRIPTION DC Current Gain - : hFE = 40(Min.)@ IC= 20mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) Complement to Type BD738 APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Coll
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
