BD776 Specs and Replacement

Type Designator: BD776

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO126

 BD776 Substitution

- BJT ⓘ Cross-Reference Search

 

BD776 datasheet

 ..1. Size:117K  motorola

 bd776 bd777 bd778 bd780.pdf pdf_icon

BD776

Order this document MOTOROLA by BD777/D SEMICONDUCTOR TECHNICAL DATA NPN BD777 Plastic Darlington PNP BD776 Complementary Silicon Power Transistors BD778 . . . designed for general purpose amplifier and high speed switching applications. High DC Current Gain BD780* hFE = 1400 (Typ) @ IC = 2.0 Adc Collector Emitter Sustaining Voltage @ 10 mAdc *Motorola Preferred... See More ⇒

Detailed specifications: BD750A, BD750B, BD750C, BD751, BD751A, BD751B, BD751C, BD775, D882, BD777, BD778, BD779, BD780, BD785, BD786, BD787, BD788

Keywords - BD776 pdf specs

 BD776 cross reference

 BD776 equivalent finder

 BD776 pdf lookup

 BD776 substitution

 BD776 replacement