All Transistors. BD777 Datasheet

 

BD777 Datasheet and Replacement


   Type Designator: BD777
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO126
 

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BD777 Datasheet (PDF)

 ..1. Size:117K  motorola
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BD777

Order this documentMOTOROLAby BD777/DSEMICONDUCTOR TECHNICAL DATANPNBD777Plastic DarlingtonPNPBD776Complementary Silicon PowerTransistorsBD778. . . designed for general purpose amplifier and highspeed switching applications. High DC Current GainBD780*hFE = 1400 (Typ) @ IC = 2.0 Adc CollectorEmitter Sustaining Voltage @ 10 mAdc*Motorola Preferred

Datasheet: BD750B , BD750C , BD751 , BD751A , BD751B , BD751C , BD775 , BD776 , TIP122 , BD778 , BD779 , BD780 , BD785 , BD786 , BD787 , BD788 , BD789 .

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