BD777 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD777
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO126
BD777 Transistor Equivalent Substitute - Cross-Reference Search
BD777 Datasheet (PDF)
bd776 bd777 bd778 bd780.pdf
Order this documentMOTOROLAby BD777/DSEMICONDUCTOR TECHNICAL DATANPNBD777Plastic DarlingtonPNPBD776Complementary Silicon PowerTransistorsBD778. . . designed for general purpose amplifier and highspeed switching applications. High DC Current GainBD780*hFE = 1400 (Typ) @ IC = 2.0 Adc CollectorEmitter Sustaining Voltage @ 10 mAdc*Motorola Preferred
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
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BJT: 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS | HSA1037AKR | HSA1037AKQ