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BD777 PDF Specs and Replacement


   Type Designator: BD777
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO126
 

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BD777 PDF detailed specifications

 ..1. Size:117K  motorola
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BD777

Order this document MOTOROLA by BD777/D SEMICONDUCTOR TECHNICAL DATA NPN BD777 Plastic Darlington PNP BD776 Complementary Silicon Power Transistors BD778 . . . designed for general purpose amplifier and high speed switching applications. High DC Current Gain BD780* hFE = 1400 (Typ) @ IC = 2.0 Adc Collector Emitter Sustaining Voltage @ 10 mAdc *Motorola Preferred... See More ⇒

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