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BD777 Specs and Replacement

Type Designator: BD777

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO126

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BD777 datasheet

 ..1. Size:117K  motorola

 bd776 bd777 bd778 bd780.pdf pdf_icon

BD777

Order this document MOTOROLA by BD777/D SEMICONDUCTOR TECHNICAL DATA NPN BD777 Plastic Darlington PNP BD776 Complementary Silicon Power Transistors BD778 . . . designed for general purpose amplifier and high speed switching applications. High DC Current Gain BD780* hFE = 1400 (Typ) @ IC = 2.0 Adc Collector Emitter Sustaining Voltage @ 10 mAdc *Motorola Preferred... See More ⇒

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History: S8550

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