BD797 Specs and Replacement

Type Designator: BD797

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

 BD797 Substitution

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BD797 datasheet

 ..1. Size:209K  inchange semiconductor

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BD797

isc Silicon NPN Power Transistor BD797 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min.) CEO(SUS) Low Saturation Voltage Complement to Type BD798 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators... See More ⇒

Detailed specifications: BD787, BD788, BD789, BD790, BD791, BD792, BD795, BD796, S8550, BD798, BD799, BD800, BD801, BD802, BD805, BD806, BD807

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