All Transistors. BD797 Datasheet

 

BD797 Datasheet and Replacement


   Type Designator: BD797
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
 

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BD797 Datasheet (PDF)

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BD797

isc Silicon NPN Power Transistor BD797DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min.)CEO(SUS)Low Saturation VoltageComplement to Type BD798Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a wide variety of medium-power switching andamplifier applications , such as series and shunt regulators

Datasheet: BD787 , BD788 , BD789 , BD790 , BD791 , BD792 , BD795 , BD796 , A940 , BD798 , BD799 , BD800 , BD801 , BD802 , BD805 , BD806 , BD807 .

History: 2SC1399U | 2SC5257 | MP13B | BF257CSM | KSE44H-1 | BLY67 | SGSF424

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