BD800 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD800
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220
BD800 Transistor Equivalent Substitute - Cross-Reference Search
BD800 Datasheet (PDF)
..1. Size:211K inchange semiconductor
bd800.pdf
bd800.pdf
isc Silicon PNP Power Transistor BD800DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Low Saturation VoltageComplement to Type BD799Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a wide variety of medium-power switching andamplifier applications , such as series and shunt regulators
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC4377
