All Transistors. BD825 Datasheet

 

BD825 Datasheet and Replacement


   Type Designator: BD825
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 125 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202
 

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BD825 Datasheet (PDF)

 ..1. Size:51K  philips
 bd825 bd829.pdf pdf_icon

BD825

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D067BD825; BD829NPN power transistorsProduct specification 1998 May 29Supersedes data of 1997 Jun 20File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN power transistors BD825; BD829FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2

 ..2. Size:211K  inchange semiconductor
 bd825.pdf pdf_icon

BD825

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD825DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD826Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: BD815 , BD815A , BD816 , BD816A , BD817 , BD817A , BD818 , BD818A , 2SD313 , BD825-10 , BD825-16 , BD825-25 , BD825-6 , BD825A , BD825B , BD826 , BD826-10 .

Keywords - BD825 transistor datasheet

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