BD825-10 Specs and Replacement

Type Designator: BD825-10

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 125 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO202

 BD825-10 Substitution

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BD825-10 datasheet

 9.1. Size:51K  philips

 bd825 bd829.pdf pdf_icon

BD825-10

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD825; BD829 NPN power transistors Product specification 1998 May 29 Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN power transistors BD825; BD829 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 ... See More ⇒

 9.2. Size:211K  inchange semiconductor

 bd825.pdf pdf_icon

BD825-10

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD825 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 45V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits. ... See More ⇒

Detailed specifications: BD815A, BD816, BD816A, BD817, BD817A, BD818, BD818A, BD825, 2SB817, BD825-16, BD825-25, BD825-6, BD825A, BD825B, BD826, BD826-10, BD826-16

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