BD826-10 Specs and Replacement

Type Designator: BD826-10

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO202

 BD826-10 Substitution

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BD826-10 datasheet

 9.1. Size:216K  inchange semiconductor

 bd826.pdf pdf_icon

BD826-10

INCHANGE Semiconductor isc Silicon PNP Power Transistor BD826 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -45V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD825 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits. ... See More ⇒

Detailed specifications: BD825, BD825-10, BD825-16, BD825-25, BD825-6, BD825A, BD825B, BD826, 2222A, BD826-16, BD826-25, BD826-6, BD826A, BD826B, BD827, BD827-10, BD827-16

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