BD826B Datasheet and Replacement
Type Designator: BD826B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO202
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BD826B Datasheet (PDF)
bd826.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD826DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD825Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N3124 | 2SB1188SQ-R | HPA150R-4 | DTA144WET1G | 2SB611A | 3DF5 | LDTD143EET1G
Keywords - BD826B transistor datasheet
BD826B cross reference
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History: 2N3124 | 2SB1188SQ-R | HPA150R-4 | DTA144WET1G | 2SB611A | 3DF5 | LDTD143EET1G



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