BD827-16 Specs and Replacement

Type Designator: BD827-16

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO202

 BD827-16 Substitution

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BD827-16 datasheet

 9.1. Size:211K  inchange semiconductor

 bd827.pdf pdf_icon

BD827-16

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD827 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits. ... See More ⇒

Detailed specifications: BD826-10, BD826-16, BD826-25, BD826-6, BD826A, BD826B, BD827, BD827-10, 2SA1015, BD827-25, BD827-6, BD827A, BD827B, BD828, BD828-10, BD828-16, BD828-25

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