All Transistors. BD827B Datasheet

 

BD827B Datasheet and Replacement


   Type Designator: BD827B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO202
 

 BD827B Substitution

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BD827B Datasheet (PDF)

 9.1. Size:211K  inchange semiconductor
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BD827B

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD827DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD828Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: BD826A , BD826B , BD827 , BD827-10 , BD827-16 , BD827-25 , BD827-6 , BD827A , 2SC828 , BD828 , BD828-10 , BD828-16 , BD828-25 , BD828-6 , BD828A , BD828B , BD829 .

Keywords - BD827B transistor datasheet

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