BD829A PDF and Equivalents Search

 

BD829A Specs and Replacement


   Type Designator: BD829A
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO202
 

 BD829A Substitution

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BD829A datasheet

 9.1. Size:51K  philips
 bd825 bd829.pdf pdf_icon

BD829A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD825; BD829 NPN power transistors Product specification 1998 May 29 Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN power transistors BD825; BD829 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 ... See More ⇒

 9.2. Size:211K  inchange semiconductor
 bd829.pdf pdf_icon

BD829A

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD829 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits. ... See More ⇒

Detailed specifications: BD828-6 , BD828A , BD828B , BD829 , BD829-10 , BD829-16 , BD829-25 , BD829-6 , B647 , BD829B , BD830 , BD830-10 , BD830-16 , BD830-25 , BD830-6 , BD830A , BD830B .

History: BD830-25 | BD834

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