All Transistors. BD830-10 Datasheet

 

BD830-10 Datasheet and Replacement


   Type Designator: BD830-10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO202
      - BJT Cross-Reference Search

   

BD830-10 Datasheet (PDF)

 9.1. Size:50K  philips
 bd830.pdf pdf_icon

BD830-10

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D067BD830PNP power transistorProduct specification 1999 Apr 21Supersedes data of 1998 May 29Philips Semiconductors Product specificationPNP power transistor BD830FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to metal part ofAPPLICATIONS mounti

 9.2. Size:212K  inchange semiconductor
 bd830.pdf pdf_icon

BD830-10

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD830DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD829Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BCP5516TA | 2SB553O | 2SB492 | 2SB559E | TP4275 | 2SB553Y | 2SB448

Keywords - BD830-10 transistor datasheet

 BD830-10 cross reference
 BD830-10 equivalent finder
 BD830-10 lookup
 BD830-10 substitution
 BD830-10 replacement

 

 
Back to Top

 


 
.