BD830-25 PDF and Equivalents Search

 

BD830-25 Specs and Replacement


   Type Designator: BD830-25
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO202
 

 BD830-25 Substitution

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BD830-25 datasheet

 9.1. Size:50K  philips
 bd830.pdf pdf_icon

BD830-25

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD830 PNP power transistor Product specification 1999 Apr 21 Supersedes data of 1998 May 29 Philips Semiconductors Product specification PNP power transistor BD830 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of APPLICATIONS mounti... See More ⇒

 9.2. Size:212K  inchange semiconductor
 bd830.pdf pdf_icon

BD830-25

INCHANGE Semiconductor isc Silicon PNP Power Transistor BD830 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD829 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits.... See More ⇒

Detailed specifications: BD829-16 , BD829-25 , BD829-6 , BD829A , BD829B , BD830 , BD830-10 , BD830-16 , BD222 , BD830-6 , BD830A , BD830B , BD833 , BD834 , BD835 , BD836 , BD837 .

History: BD834

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