All Transistors. BD839 Datasheet

 

BD839 Datasheet and Replacement


   Type Designator: BD839
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 125 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202
 

 BD839 Substitution

   - BJT ⓘ Cross-Reference Search

   

BD839 Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
 bd839.pdf pdf_icon

BD839

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD839DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD840Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in television circuits and audio applicationsABSOLUTE M

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 40809 | 2N821 | 40829 | 2N3673 | 2N3676

Keywords - BD839 transistor datasheet

 BD839 cross reference
 BD839 equivalent finder
 BD839 lookup
 BD839 substitution
 BD839 replacement

 

 
Back to Top

 


 
.