BD842 Datasheet and Replacement
Type Designator: BD842
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO202
BD842 Datasheet (PDF)
bd842.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD842DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD841Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: PBLS2021D | 2S141 | DC0150ADJ | BFR280 | HSE166 | 2ST31A | 2N3976
Keywords - BD842 transistor datasheet
BD842 cross reference
BD842 equivalent finder
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History: PBLS2021D | 2S141 | DC0150ADJ | BFR280 | HSE166 | 2ST31A | 2N3976



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