BD842 Specs and Replacement

Type Designator: BD842

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO202

 BD842 Substitution

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BD842 datasheet

 ..1. Size:211K  inchange semiconductor

 bd842.pdf pdf_icon

BD842

INCHANGE Semiconductor isc Silicon PNP Power Transistor BD842 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD841 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits. ... See More ⇒

Detailed specifications: BD834, BD835, BD836, BD837, BD838, BD839, BD840, BD841, TIP41, BD843, BD844, BD845, BD846, BD847, BD848, BD849, BD850

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