All Transistors. BD842 Datasheet

 

BD842 Datasheet and Replacement


   Type Designator: BD842
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202
 

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BD842 Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
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BD842

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD842DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD841Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: BD834 , BD835 , BD836 , BD837 , BD838 , BD839 , BD840 , BD841 , A1015 , BD843 , BD844 , BD845 , BD846 , BD847 , BD848 , BD849 , BD850 .

History: 40853 | 41024

Keywords - BD842 transistor datasheet

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