All Transistors. BD843 Datasheet

 

BD843 Datasheet and Replacement


   Type Designator: BD843
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 125 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202
 

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BD843 Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
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BD843

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD843DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD844Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in television circuits and audio applicationsABSOLUTE M

Datasheet: BD835 , BD836 , BD837 , BD838 , BD839 , BD840 , BD841 , BD842 , 13007 , BD844 , BD845 , BD846 , BD847 , BD848 , BD849 , BD850 , BD861 .

History: PTB20074 | BD845

Keywords - BD843 transistor datasheet

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