All Transistors. BD898A Datasheet

 

BD898A Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD898A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220

 BD898A Transistor Equivalent Substitute - Cross-Reference Search

   

BD898A Datasheet (PDF)

 ..1. Size:120K  inchange semiconductor
bd896a bd898a bd900a.pdf

BD898A
BD898A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896A/898A/900A DESCRIPTION With TO-220C package Complement to type BD895A/897A/901A DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

 ..2. Size:212K  inchange semiconductor
bd898a.pdf

BD898A
BD898A

isc Silicon PNP Darlington Power Transistor BD898ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -4AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD897AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation

 9.1. Size:212K  inchange semiconductor
bd898.pdf

BD898A
BD898A

isc Silicon PNP Darlington Power Transistor BD898DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -3AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD897Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

 9.2. Size:121K  inchange semiconductor
bd896 bd898 bd900 bd902.pdf

BD898A
BD898A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896/898/900/902 DESCRIPTION With TO-220C package Complement to type BD895/897/899/901 DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: GF502

 

 
Back to Top