All Transistors. BD899 Datasheet

 

BD899 Datasheet and Replacement


   Type Designator: BD899
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220
 

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BD899 Datasheet (PDF)

 ..1. Size:121K  inchange semiconductor
 bd895 bd897 bd899 bd901.pdf pdf_icon

BD899

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895/897/899/901 DESCRIPTION With TO-220C package Complement to type BD896/898/900/902 DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3

 ..2. Size:212K  inchange semiconductor
 bd899.pdf pdf_icon

BD899

isc Silicon NPN Darlington Power Transistor BD899DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 3AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD900Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPL

 0.1. Size:120K  inchange semiconductor
 bd895a bd897a bd899a.pdf pdf_icon

BD899

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895A/897A/899A DESCRIPTION With TO-220C package Complement to type BD896A/898A/900A DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

 0.2. Size:212K  inchange semiconductor
 bd899a.pdf pdf_icon

BD899

isc Silicon NPN Darlington Power Transistor BD899ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 4AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD900AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

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Datasheet: BD895 , BD895A , BD896 , BD896A , BD897 , BD897A , BD898 , BD898A , TIP35C , BD899A , BD900 , BD900A , BD901 , BD902 , BD905 , BD906 , BD907 .

History: BD355B | NPS5910 | LDTB114TKT1G | BD466B | 2N1635 | BD141 | BD815A

Keywords - BD899 transistor datasheet

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