BD947F Specs and Replacement
Type Designator: BD947F
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Package: TO220F
BD947F Substitution
- BJT ⓘ Cross-Reference Search
BD947F datasheet
isc Silicon NPN Power Transistor BD943F/945F/947F DESCRIPTION DC Current Gain- h = 85(Min)@ I = 500mA FE C Complement to Type BD944F/946F/948F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒
isc Silicon NPN Power Transistor BD943/945/947 DESCRIPTION DC Current Gain- h = 85(Min)@ I = 500mA FE C Complement to Type BD944/946/948 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
Detailed specifications: BD943F, BD944, BD944F, BD945, BD945F, BD946, BD946F, BD947, 2N2907, BD948, BD948F, BD949, BD949F, BD950, BD950F, BD951, BD951F
Keywords - BD947F pdf specs
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History: MJ10023
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