All Transistors. 2N2907A Datasheet

 

2N2907A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N2907A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO18

 2N2907A Transistor Equivalent Substitute - Cross-Reference Search

   

2N2907A Datasheet (PDF)

 ..1. Size:52K  philips
2n2907 2n2907a 1.pdf

2N2907A 2N2907A

DISCRETE SEMICONDUCTORSDATA SHEETM3D1252N2907; 2N2907APNP switching transistors1997 May 30Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP switching transistors 2N2907; 2N2907AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 emitte

 ..2. Size:727K  st
2n2905a 2n2907a.pdf

2N2907A 2N2907A

2N2905A2N2907ASMALL SIGNAL PNP TRANSISTORSDESCRIPTION The 2N2905A and 2N2907A are silicon PlanarEpitaxial PNP transistors in Jedec TO-39 (for2N2905A) and in Jedec TO-18 (for 2N2907A)metal case. They are designed for high speedsaturated switching and general purposeapplications.TO-18 TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit

 ..3. Size:453K  mcc
2n2907 2n2907a to-18.pdf

2N2907A 2N2907A

MCC2N2907TM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2N2907ACA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features High current (max.600mA) Low voltage (max.60V) PNP Switching Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates TransistorsRoHS Compliant. See ordering information) Maximum Ratings

 ..4. Size:99K  microsemi
2n2906a 2n2907a 2n2906al 2n2907al 2n2906aua 2n2907aua 2n2906aub 2n2907aub 2n2906aubc 2n2907aubc.pdf

2N2907A 2N2907A

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC * * Available to JANS qua

 ..5. Size:1253K  blue-rocket-elect
2n2907a.pdf

2N2907A 2N2907A

2N2907A Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features Low Leakage current, Low collector saturation voltage. / Applications General amplifier. / Equivalent Circuit

 ..6. Size:247K  semtech
2n2907 2n2907a.pdf

2N2907A 2N2907A

2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Col

 0.1. Size:240K  motorola
mtp2n2907a.pdf

2N2907A 2N2907A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2907A/DAmplifier TransistorPNP SiliconP2N2907ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 60 Vdc 3CollectorBase Voltage VCBO 60 VdcCASE 2904, STYLE 17EmitterBase Voltage VEBO 5.0 VdcTO92 (TO226AA)Collector Current

 0.2. Size:502K  st
2n2907ahr.pdf

2N2907A 2N2907A

2N2907AHRHi-Rel 60 V, 0.6 A PNP transistorDatasheet - production dataFeaturesParameter Value123BVCEO 60 V TO-18IC (max) 0.6 A33HFE at 10 V - 150 mA > 10041122 Hermetic packagesLCC-3 UB ESCC and JANS qualifiedPin 4 in UB is connected to the metallic lid. European preferred part list EPPLFigure 1. Internal schematic diagram DescriptionT

 0.3. Size:162K  onsemi
p2n2907a.pdf

2N2907A 2N2907A

P2N2907AAmplifier TransistorPNP SiliconFeatures These are Pb--Free Devices*http://onsemi.comCOLLECTOR1MAXIMUM RATINGSRating Symbol Value Unit2BASECollector--Emitter Voltage VCEO --60 VdcCollector--Base Voltage VCBO --60 Vdc3Emitter--Base Voltage VEBO --5.0 VdcEMITTERCollector Current -- Continuous IC --600 mAdcTotal Device Dissipation @ TA =25C PD 625 mW

 0.4. Size:242K  optek
2n2907aub.pdf

2N2907A 2N2907A

Product Bulletin JANTX, JANTXV, 2N2907AUBSeptember 1996Surface Mount PNP General Purpose TransistorType JANTX, JANTXV, 2N2907AUBFeatures Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 VCeramic surface mount packageCollector-Emitter Voltage. . . . . .

 0.5. Size:95K  optek
2n2907aua.pdf

2N2907A 2N2907A

 0.6. Size:200K  semelab
2n2907ac3a.pdf

2N2907A 2N2907A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 0.7. Size:22K  semelab
2n2907acsmcecc.pdf

2N2907A 2N2907A

2N2907ACSMSEMELABHIGH SPEED, MEDIUM POWER, PNPSWITCHING TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONSFEATURES0.51 0.10 SILICON PLANAR EPITAXIAL PNP (0.02 0.004) 0.31rad.(0.012)TRANSISTOR3 HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE)21 CE

 0.8. Size:563K  semelab
2n2907ac1a.pdf

2N2907A 2N2907A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 0.9. Size:200K  semelab
2n2907ac3b.pdf

2N2907A 2N2907A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 0.10. Size:563K  semelab
2n2907ac1b.pdf

2N2907A 2N2907A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 0.11. Size:89K  semelab
2n2907aua.pdf

2N2907A 2N2907A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AUA Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 0.12. Size:200K  semelab
2n2907ac3c.pdf

2N2907A 2N2907A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 0.13. Size:144K  semelab
2n2907acsm4r.pdf

2N2907A 2N2907A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter V

 0.14. Size:10K  semelab
2n2907acecc.pdf

2N2907A

2N2907ACECCDimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 60V 0.48 (0.019)0.41 (0.016)dia.IC = 0.6A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX

 0.15. Size:33K  semelab
2n2907adcsm.pdf

2N2907A 2N2907A

2N2907ADCSMSEMELABDUAL HIGH SPEED, MEDIUM POWERPNP SWITCHING TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONSFEATURES1.40 0.152.29 0.20 1.65 0.13 DUAL SILICON PLANAR EPITAXIAL(0.055 0.006)(0.09 0.008) (0.065 0.005)PNP TRANSISTORS2 3 HERMETIC CERAMIC

 0.16. Size:100K  microsemi
2n2907al.pdf

2N2907A 2N2907A

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907AJANSD 10K Rads (Si) 2N2906AL 2N2907ALJANSP 30K Rads (Si) 2N2906AUA 2N2907AUAJANS

 0.17. Size:100K  microsemi
2n2907aubc.pdf

2N2907A 2N2907A

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907AJANSD 10K Rads (Si) 2N2906AL 2N2907ALJANSP 30K Rads (Si) 2N2906AUA 2N2907AUAJANS

 0.18. Size:377K  first silicon
2n2907as.pdf

2N2907A 2N2907A

SEMICONDUCTOR2N2907ASTECHNICAL DATAGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-23 package which 3is designed for low power surface mount applications.2Features1compliance with RoHS requirements. We declare that the material of product SOT 23 ORDERING INFORMATION

 0.19. Size:265K  first silicon
2n2907au.pdf

2N2907A 2N2907A

SEMICONDUCTOR2N2907AUTECHNICAL DATAGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifier3applications. They are housed in the SC-323/SC-70 package whichis designed for low power surface mount applications.1Features2compliance with RoHS requirements. We declare that the material of product SC-70 / SOT 323 ORDERING IN

Datasheet: 2N2905S , 2N2906 , 2N2906A , 2N2906ACSM , 2N2906ADCSM , 2N2906AQF , 2N2906CSM , 2N2907 , 2SC945 , 2N2907ACSM , 2N2907ACSM4 , 2N2907AQF , 2N2907AUB , 2N2907CSM , 2N2908 , 2N2909 , 2N291 .

 

 
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