2N2907A datasheet, аналоги, основные параметры
Наименование производителя: 2N2907A 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.4 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: TO18
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Аналоги (замена) для 2N2907A
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2N2907A даташит
..1. Size:52K philips
2n2907 2n2907a 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors 1997 May 30 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2907; 2N2907A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 60 V). 1 emitte
..2. Size:727K st
2n2905a 2n2907a.pdf 
2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit
..3. Size:453K mcc
2n2907 2n2907a to-18.pdf 
MCC 2N2907 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2N2907A CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features High current (max.600mA) Low voltage (max.60V) PNP Switching Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings
..6. Size:247K semtech
2n2907 2n2907a.pdf 
2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Col
0.2. Size:502K st
2n2907ahr.pdf 
2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value 1 2 3 BVCEO 60 V TO-18 IC (max) 0.6 A 3 3 HFE at 10 V - 150 mA > 100 4 1 1 2 2 Hermetic packages LCC-3 UB ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid. European preferred part list EPPL Figure 1. Internal schematic diagram Description T
0.3. Size:162K onsemi
p2n2907a.pdf 
P2N2907A Amplifier Transistor PNP Silicon Features These are Pb--Free Devices* http //onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO --60 Vdc Collector--Base Voltage VCBO --60 Vdc 3 Emitter--Base Voltage VEBO --5.0 Vdc EMITTER Collector Current -- Continuous IC --600 mAdc Total Device Dissipation @ TA =25 C PD 625 mW
0.4. Size:242K optek
2n2907aub.pdf 
Product Bulletin JANTX, JANTXV, 2N2907AUB September 1996 Surface Mount PNP General Purpose Transistor Type JANTX, JANTXV, 2N2907AUB Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Ceramic surface mount package Collector-Emitter Voltage. . . . . .
0.6. Size:200K semelab
2n2907ac3a.pdf 
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
0.7. Size:22K semelab
2n2907acsmcecc.pdf 
2N2907ACSM SEME LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 0.10 SILICON PLANAR EPITAXIAL PNP (0.02 0.004) 0.31 rad. (0.012) TRANSISTOR 3 HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 21 CE
0.8. Size:563K semelab
2n2907ac1a.pdf 
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
0.9. Size:200K semelab
2n2907ac3b.pdf 
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
0.10. Size:563K semelab
2n2907ac1b.pdf 
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
0.11. Size:89K semelab
2n2907aua.pdf 
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AUA Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
0.12. Size:200K semelab
2n2907ac3c.pdf 
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
0.13. Size:144K semelab
2n2907acsm4r.pdf 
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter V
0.14. Size:10K semelab
2n2907acecc.pdf 
2N2907ACECC Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.6A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX
0.15. Size:33K semelab
2n2907adcsm.pdf 
2N2907ADCSM SEME LAB DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS FEATURES 1.40 0.15 2.29 0.20 1.65 0.13 DUAL SILICON PLANAR EPITAXIAL (0.055 0.006) (0.09 0.008) (0.065 0.005) PNP TRANSISTORS 2 3 HERMETIC CERAMIC
0.16. Size:100K microsemi
2n2907al.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907A JANSD 10K Rads (Si) 2N2906AL 2N2907AL JANSP 30K Rads (Si) 2N2906AUA 2N2907AUA JANS
0.17. Size:100K microsemi
2n2907aubc.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907A JANSD 10K Rads (Si) 2N2906AL 2N2907AL JANSP 30K Rads (Si) 2N2906AUA 2N2907AUA JANS
0.18. Size:377K first silicon
2n2907as.pdf 
SEMICONDUCTOR 2N2907AS TECHNICAL DATA General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-23 package which 3 is designed for low power surface mount applications. 2 Features 1 compliance with RoHS requirements. We declare that the material of product SOT 23 ORDERING INFORMATION
0.19. Size:265K first silicon
2n2907au.pdf 
SEMICONDUCTOR 2N2907AU TECHNICAL DATA General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-323/SC-70 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. We declare that the material of product SC-70 / SOT 323 ORDERING IN
Другие транзисторы: 2N2905S, 2N2906, 2N2906A, 2N2906ACSM, 2N2906ADCSM, 2N2906AQF, 2N2906CSM, 2N2907, 2SD669, 2N2907ACSM, 2N2907ACSM4, 2N2907AQF, 2N2907AUB, 2N2907CSM, 2N2908, 2N2909, 2N291
