BD979 Specs and Replacement
Type Designator: BD979
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 3.6 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 4000
Package: TO202
BD979 Substitution
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BD979 datasheet
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Detailed specifications: BD955, BD955F, BD956, BD956F, BD975, BD976, BD977, BD978, C945, BD980, BDAP36, BDAP54, BDAP54A, BDAP54B, BDAP54C, BDAP55, BDB01A
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