All Transistors. BDB01B Datasheet

 

BDB01B Datasheet and Replacement


   Type Designator: BDB01B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92
 

 BDB01B Substitution

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BDB01B Datasheet (PDF)

 9.1. Size:132K  motorola
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BDB01B

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BDB01C/DOne Watt Amplifier TransistorsBDB01C,DNPN SiliconCOLLECTOR32BASE1231EMITTERCASE 2905, STYLE 1MAXIMUM RATINGSTO92 (TO226AE)Rating Symbol BDB01C BDB01D UnitCollectorEmitter Voltage VCEO 80 100 VdcCollectorBase Voltage VCES 80 100 VdcEmitterBase Voltage VEBO 5.0 VdcColl

Datasheet: BD980 , BDAP36 , BDAP54 , BDAP54A , BDAP54B , BDAP54C , BDAP55 , BDB01A , BC337 , BDB01D , BDB02A , BDB02B , BDB02C , BDB02D , BDB03 , BDB04 , BDB05 .

History: MP5134 | HEPS0009 | KT6116A | 2SC3978 | D880C-G | 2SC1013 | 2SB631KD

Keywords - BDB01B transistor datasheet

 BDB01B cross reference
 BDB01B equivalent finder
 BDB01B lookup
 BDB01B substitution
 BDB01B replacement

 

 
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