BDB01B Specs and Replacement
Type Designator: BDB01B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
BDB01B Substitution
- BJT ⓘ Cross-Reference Search
BDB01B datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BDB01C/D One Watt Amplifier Transistors BDB01C,D NPN Silicon COLLECTOR 3 2 BASE 1 2 3 1 EMITTER CASE 29 05, STYLE 1 MAXIMUM RATINGS TO 92 (TO 226AE) Rating Symbol BDB01C BDB01D Unit Collector Emitter Voltage VCEO 80 100 Vdc Collector Base Voltage VCES 80 100 Vdc Emitter Base Voltage VEBO 5.0 Vdc Coll... See More ⇒
Detailed specifications: BD980, BDAP36, BDAP54, BDAP54A, BDAP54B, BDAP54C, BDAP55, BDB01A, 2SA1943, BDB01D, BDB02A, BDB02B, BDB02C, BDB02D, BDB03, BDB04, BDB05
Keywords - BDB01B pdf specs
BDB01B cross reference
BDB01B equivalent finder
BDB01B pdf lookup
BDB01B substitution
BDB01B replacement
